smbt 2222a 1 oct-14-1999 npn silicon switching transistor ? high dc current gain: 0.1ma to 500 ma ? low collector-emitter saturation voltage ? complementary type: smbt 2907a (pnp) 1 2 3 vps05161 type marking pin configuration package smbt 2222a s1b 1=b 2=e 3=c sot-23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 75 emitter-base voltage 6 v ebo i c dc collector current 600 ma total power dissipation , t s = 77 c mw p tot 330 junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 290 k/w junction - soldering point r thjs 220 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
smbt 2222a 2 oct-14-1999 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol unit values min. max. typ. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 40 - v - collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo - 75 - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo - - 6 collector cutoff current v cb = 60 v, i e = 0 i cbo - na 10 - collector cutoff current v cb = 60 v, i e = 0 , t a = 150 c i cbo - - a 10 emitter cutoff current v eb = 3 v, i c = 0 i ebo - - na 10 dc current gain 1) i c = 100 a, v ce = 10 v i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 150 ma, v ce = 1 v i c = 150 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 10 ma, v ce = 10 v, t a = 55c h fe - - - - - - - - - - - 300 - - 35 50 75 50 100 40 35 - collector-emitter saturation voltage1) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v cesat - - v 0.3 1 - - 1.2 2 base-emitter saturation voltage 1) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v besat 0.6 - - - 1) pulse test: t 300 s, d = 2%
smbt 2222a 3 oct-14-1999 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol unit values max. min. typ. ac characteristics transition frequency i c = 20 ma, v ce = 20 v, f = 100 mhz - mhz - f t 300 collector-base capacitance v cb = 10 v, f = 1 mhz - 8 pf - c cb emitter-base capacitance v eb = 0.5 v, f = 1 mhz - - 25 c eb noise figure i c = 100 a, v ce = 10 v, r s = 1 k ? , f = 1 khz, ? f = 200 hz db f - 4 - short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz 8 1.25 k ? - - h 11e 2 0.25 open-circuit reverse voltage transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz - - 8 4 10 -4 - - h 12e short-circuit forward current transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz 50 75 - - 300 375 - h 21e open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz s h 22e 5 25 35 200 - - delay time v cc = 30 v, i c = 150 ma, i b1 = 15 ma, v be(off) = 0.5 v 10 ns - t d - rise time v cc = 30 v, i c = 150 ma, i b1 = 15 ma, v be(off) = 0.5 v - 25 - t r storage time v cc = 30 v, i c = 150 ma, i b1 = i b2 = 15ma - - 225 t stg fall time v cc = 30 v, i c = 150 ma, i b1 = i b2 = 15ma t f - - 60
smbt 2222a 4 oct-14-1999 test circuits delay and rise time ehn00055 200 osc. 619 30 9.9 0 0.5 ? ? v v v storage and fall time ehn00056 200 osc. 1 30 16.2 0 -13.8 -3.0 500 ~s s ~100 < 5 ns ? ? v v v v k oscillograph : r > 100 ? , c < 12pf, t r < 5ns
smbt 2222a 5 oct-14-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00738 smbt 2222/a 150 50 100 ?c t as t 100 200 300 mw 400 p tot t t ; as collector-base capacitance c cb = f ( v cb ) f = 1mhz ehp00739 smbt 2222/a 10 pf 10 10 v c cb 10 5 10 cb 55 -1 0 1 2 10 2 1 10 0 5 v permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00740 smbt 2222/a -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 20v ehp00741 smbt 2222/a 10 10 10 ma f c 10 mhz 10 t 555 0123 10 3 2 10 1 5 2 2
smbt 2222a 6 oct-14-1999 saturation voltage i c = f ( v besat , v cesat ) h fe = 10 ehp00742 smbt 2222/a 10 0 v be sat ma 10 3 1 10 -1 5 10 0 5 v 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce c dc current gain h fe = f ( i c ) v ce = 10v ehp00743 smbt 2222/a 10 10 ma h c 10 5 fe 10 3 2 10 1 5 10 10 10 -1 0 1 2 3 -50 ? c 25 ? c 150 ? c delay time t d = f ( i c ) rise time t r = f ( i c ) ehp00744 smbt 2222/a 10 ns 10 10 ma t c 10 5 10 d 555 0123 10 3 2 10 1 5 r t , h fe t d t d t r t r v cc = 30 v = 10 v be = 5 v = 2 v = 0 v v be v be storage time t stg = f ( i c ) fall time t f = f ( i c ) ehp00745 smbt 2222/a 10 10 ma c 5 10 3 2 10 1 5 10 10 12 3 5 5 ns fe h h fe s t f t = 10 = 20 s t t , f h fe = 10
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